Evaluare: 5 din 5 stele
5/5
Încărcare
NP![]()
author
Navid Payvadosi
Navid Paydavosi received his Ph.D. degree in Micro-Electro-Mechanical Systems (MEMS) and Nanosystems from the University of Alberta, Canada in 2011. He worked for the BSIM Group at University of Ca...vizualizați mai multeNavid Paydavosi received his Ph.D. degree in Micro-Electro-Mechanical Systems (MEMS) and Nanosystems from the University of Alberta, Canada in 2011. He worked for the BSIM Group at University of California, Berkeley as a post-doctoral scholar from 2012 to 2014. He has published several research papers on the theory and modeling of modern Si-MOSFETs and its future alternatives, including carbon-based and III-V high electron mobility devices. Currently Dr. Paydavosi is with Intel Corp., Oregon as a device engineer working on process technology development.vizualizați mai puține
Cărți de Navid Payvadosi
FinFET Modeling for IC Simulation and Design: Using the BSIM-CMG Standard